DocumentCode :
2064263
Title :
A temperature sensing front-end using CMOS substrate PNP transistors
Author :
Dexin Kong ; Ting Yu ; Fengqi Yu
Author_Institution :
Shenzhen Inst. of Adv. Technol., Shenzhen, China
fYear :
2013
fDate :
28-31 Oct. 2013
Firstpage :
1
Lastpage :
4
Abstract :
A temperature sensing front-end of temperature sensor based on CMOS substrate pnp transistors is presented. It uses ΔVBE which is proportional to absolute temperature (PTAT) to realize temperature measurement. Non-idealities of the resulting PTAT voltage are analyzed and circuit compensation techniques for these non-idealities are introduced. The circuit is implemented in Chartered 0.18μm CMOS technology, and by taking the reverse Early effect into account. Experimental results show that temperature accuracy which is extracted from experiment can reach ±0.5°C in the range of -40°C to 40°C.
Keywords :
CMOS integrated circuits; MOSFET; compensation; temperature measurement; temperature sensors; CMOS substrate PNP transistors; Chartered CMOS technology; PTAT voltage; circuit compensation techniques; proportional to absolute temperature; size 0.18 mum; temperature -40 degC to 40 degC; temperature measurement; temperature sensing front-end; temperature sensor; CMOS integrated circuits; CMOS technology; Resistance; Substrates; Temperature measurement; Temperature sensors; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location :
Shenzhen
ISSN :
2162-7541
Print_ISBN :
978-1-4673-6415-7
Type :
conf
DOI :
10.1109/ASICON.2013.6811854
Filename :
6811854
Link To Document :
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