A temperature sensing front-end using CMOS substrate PNP transistors

Author

Dexin Kong ; Ting Yu ; Fengqi Yu

Author_Institution

Shenzhen Inst. of Adv. Technol., Shenzhen, China

fYear

2013

fDate

28-31 Oct. 2013

Firstpage

1

Lastpage

4

Abstract

A temperature sensing front-end of temperature sensor based on CMOS substrate pnp transistors is presented. It uses ΔV_BE which is proportional to absolute temperature (PTAT) to realize temperature measurement. Non-idealities of the resulting PTAT voltage are analyzed and circuit compensation techniques for these non-idealities are introduced. The circuit is implemented in Chartered 0.18μm CMOS technology, and by taking the reverse Early effect into account. Experimental results show that temperature accuracy which is extracted from experiment can reach ±0.5°C in the range of -40°C to 40°C.

Keywords

CMOS integrated circuits; MOSFET; compensation; temperature measurement; temperature sensors; CMOS substrate PNP transistors; Chartered CMOS technology; PTAT voltage; circuit compensation techniques; proportional to absolute temperature; size 0.18 mum; temperature -40 degC to 40 degC; temperature measurement; temperature sensing front-end; temperature sensor; CMOS integrated circuits; CMOS technology; Resistance; Substrates; Temperature measurement; Temperature sensors; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC (ASICON), 2013 IEEE 10th International Conference on

Conference_Location

Shenzhen

ISSN

2162-7541

Print_ISBN

978-1-4673-6415-7

Type

conf

DOI

10.1109/ASICON.2013.6811854

Filename

6811854