• DocumentCode
    2064368
  • Title

    Intrinsic defects pinned at the domain wall in lithium niobate

  • Author

    Stone, G. ; Steigerwald, H. ; Buse, K. ; Sohler, W. ; Gopalan, V. ; Phillpot, S. ; Dierolf, V.

  • Author_Institution
    Phys. Dept., Lehigh Univ., Bethlehem, PA, USA
  • fYear
    2011
  • fDate
    22-26 May 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Ferroelectric domain engineering is a powerful technique that can be used to create nonlinear optical devices based on quasi-phase matching. However, creating domains smaller than 1μm poses significant challenges. This is partially due to an incomplete understanding of the properties of the ferroelectric domains; particularly in regards to the interaction of the domain wall and intrinsic defects, which determine the domain shapes and growth dynamics. Such defects are present in large numbers in congruent LiNbO3 crystals due to lithium deficiency. Due to the ionic nature of these intrinsic defects, they constitute defect dipoles that can be oriented in different ways in respect to the ferroelectric axis. In particular, after a domain inversion at room temperature these dipoles may not reorient along with the ferroelectric polarization and find themselves in an energetically unfavorable, “frustrated,” alignment that creates strain in the material. It has been found that such strain is released over time and by thermal treatments as shown by the observation of characteristic shifts in the Raman spectra.
  • Keywords
    Raman spectra; crystal defects; electric domain walls; lithium compounds; optical phase matching; LiNbO3; Raman spectra; congruent crystals; domain wall; ferroelectric axis; ferroelectric domain; ferroelectric polarization; intrinsic defects; ionic nature; lithium niobate; nonlinear optical devices; quasiphase matching; temperature 293 K to 298 K; thermal treatments; Lithium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
  • Conference_Location
    Munich
  • ISSN
    Pending
  • Print_ISBN
    978-1-4577-0533-5
  • Electronic_ISBN
    Pending
  • Type

    conf

  • DOI
    10.1109/CLEOE.2011.5942847
  • Filename
    5942847