Title :
Parameters extraction of a scalable Mextram model for high-speed SiGe HBTs
Author :
Wu, H.C. ; Mijalkovic, S. ; Burghartz, J.
Author_Institution :
Lab. of High Frequency Technol. & Components, Delft Univ. of Technol., Netherlands
Abstract :
A methodology to perform a geometry scaling of Mextram parameters for high-speed SiGe HBTs has been presented. The scaling is based on the parameter sets of individual devices having different geometries and sheet resistance measurement data. The scaleable model results have been verified with CV, DC, Ft and S11, S21 results up to 40 GHz.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device models; semiconductor materials; 40 GHz; SiGe; geometry scaling; high-speed HBT; scalable Mextram model parameter extraction; sheet resistance; Bipolar transistors; Electrical resistance measurement; Equations; Geometry; Germanium silicon alloys; Heterojunction bipolar transistors; Parameter extraction; Semiconductor device modeling; Silicon germanium; Solid modeling;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
DOI :
10.1109/BIPOL.2004.1365764
