DocumentCode
2064383
Title
Parameters extraction of a scalable Mextram model for high-speed SiGe HBTs
Author
Wu, H.C. ; Mijalkovic, S. ; Burghartz, J.
Author_Institution
Lab. of High Frequency Technol. & Components, Delft Univ. of Technol., Netherlands
fYear
2004
fDate
13-14 Sept. 2004
Firstpage
140
Lastpage
143
Abstract
A methodology to perform a geometry scaling of Mextram parameters for high-speed SiGe HBTs has been presented. The scaling is based on the parameter sets of individual devices having different geometries and sheet resistance measurement data. The scaleable model results have been verified with CV, DC, Ft and S11, S21 results up to 40 GHz.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device models; semiconductor materials; 40 GHz; SiGe; geometry scaling; high-speed HBT; scalable Mextram model parameter extraction; sheet resistance; Bipolar transistors; Electrical resistance measurement; Equations; Geometry; Germanium silicon alloys; Heterojunction bipolar transistors; Parameter extraction; Semiconductor device modeling; Silicon germanium; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN
0-7803-8618-3
Type
conf
DOI
10.1109/BIPOL.2004.1365764
Filename
1365764
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