• DocumentCode
    2064605
  • Title

    The effect of deep trench and sub-collector on the latchup robustness in BiCMOS silicon germanium technology

  • Author

    Watson, Anne ; Voldman, Steven H.

  • Author_Institution
    Pennsylvania State Univ., State College, PA, USA
  • fYear
    2004
  • fDate
    13-14 Sept. 2004
  • Firstpage
    172
  • Lastpage
    175
  • Abstract
    This paper demonstrates the influence and improvement of deep trench (DT) isolation, and bipolar sub-collector on CMOS latchup in a 0.13 μm CMOS-based 200/285 GHz (fT/fmax) SiGe HBT technology.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; MIMIC; heterojunction bipolar transistors; isolation technology; semiconductor materials; 0.13 micron; 200 GHz; 285 GHz; BiCMOS technology; CMOS latchup robustness; CMOS-based HBT technology; SiGe; bipolar sub-collector structures; deep trench isolation; BiCMOS integrated circuits; CMOS technology; Educational institutions; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Microelectronics; Robustness; Silicon germanium; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
  • Print_ISBN
    0-7803-8618-3
  • Type

    conf

  • DOI
    10.1109/BIPOL.2004.1365772
  • Filename
    1365772
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2064605