DocumentCode :
2064605
Title :
The effect of deep trench and sub-collector on the latchup robustness in BiCMOS silicon germanium technology
Author :
Watson, Anne ; Voldman, Steven H.
Author_Institution :
Pennsylvania State Univ., State College, PA, USA
fYear :
2004
fDate :
13-14 Sept. 2004
Firstpage :
172
Lastpage :
175
Abstract :
This paper demonstrates the influence and improvement of deep trench (DT) isolation, and bipolar sub-collector on CMOS latchup in a 0.13 μm CMOS-based 200/285 GHz (fT/fmax) SiGe HBT technology.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MIMIC; heterojunction bipolar transistors; isolation technology; semiconductor materials; 0.13 micron; 200 GHz; 285 GHz; BiCMOS technology; CMOS latchup robustness; CMOS-based HBT technology; SiGe; bipolar sub-collector structures; deep trench isolation; BiCMOS integrated circuits; CMOS technology; Educational institutions; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Microelectronics; Robustness; Silicon germanium; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
Type :
conf
DOI :
10.1109/BIPOL.2004.1365772
Filename :
1365772
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2064605
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