Title :
Ultra high frequency static dividers > 150 GHz in a narrow mesa InGaAs/InP DHBT technology
Author :
Griffith, Zach ; Dahlstrm, M. ; Rodwell, Mark J.W. ; Urteaga, Miguel ; Pierson, Richard ; Rowell, Petra ; Brar, Bobby ; Lee, Sangmin ; Nguyen, Nguyen ; Nguyen, Chanh
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
A static frequency divider with a maximum clock frequency >150 GHz was designed and fabricated in a narrow mesa InP/In0.53Ga0.47As/InP DHBT technology. The divider operation is fully static, operating from fdk = 3 GHz to 152.0 GHz while dissipating 594.7 mW of power in the circuit core from a -4.07 V supply. The circuit employs single-buffered emitter coupled logic (ECL) and inductive peaking. The transistors have an emitter junction width of 0.5 μm and a 3.0 collector-to-emitter area ratio. A microstrip wiring environment is employed for high interconnect density, and to minimize resonances and impedance mismatch at frequencies >100 GHz.
Keywords :
III-V semiconductors; bipolar MIMIC; emitter-coupled logic; frequency dividers; gallium arsenide; heterojunction bipolar transistors; impedance matching; indium compounds; microstrip circuits; millimetre wave frequency convertors; -4.07 V; 0.5 micron; 3 to 152.0 GHz; 594.7 mW; ECL; InGaAs-InP; collector-to-emitter area ratio; divide by two circuits; double heterojunction bipolar transistors; emitter junction width; impedance mismatch minimization; inductive peaking; maximum clock frequency; microstrip interconnects; narrow mesa DHBT technology; resonance minimization; single-buffered emitter coupled logic; static frequency divider; ultra high frequency static dividers; Clocks; Coupling circuits; DH-HEMTs; Frequency conversion; Indium gallium arsenide; Indium phosphide; Integrated circuit interconnections; Logic circuits; Microstrip; Wiring;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
DOI :
10.1109/BIPOL.2004.1365773
