Title :
AC and DC characteristics of carbon nanotube field-effect transistors
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Recent results on the DC as well as AC characteristics of carbon nanotube field-effect transistors (CN-FETs) are presented. Experimental data is discussed in the context of an extended Schottky barrier model and the potential of CNFETs for high frequency applications is elucidated.
Keywords :
Schottky barriers; carbon nanotubes; field effect transistors; nanotube devices; C; CN-FET AC characteristics; CNFET DC characteristics; carbon nanotube field-effect transistors; extended Schottky barrier model; high frequency CNFET; CNTFETs; Carbon nanotubes; FETs; Frequency; High K dielectric materials; Nanotube devices; Organic materials; Scattering; Schottky barriers; Silicon;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
DOI :
10.1109/BIPOL.2004.1365777
