Direct Extraction of All Four Transistor Noise Parameters from a Single Noise Figure Measurement

A measurement and analysis technique has been developed that allows for, after s-parameter measurements, direct extraction of all four transistor noise parameters from a single noise figure measurement. A simple 50 ¿ noise source measurement system can thus be used for noise parameter extraction, simplifying considerably the measurement of noise parameters and so enablitg fully automated high frequency testing and wafer mappintg measurement systems to provide both s-parameters and noise parameters.