Title :
High-voltage SiC and GaN power devices
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
Wide bandgap semiconductors, particularly SiC and GaN, have recently attracted much attention for power electronics applications because they are projected to have more than 100 times better performance than silicon. In this paper, we review the recent progress in SiC and GaN high-voltage power switching device demonstrations.
Keywords :
III-V semiconductors; gallium compounds; power semiconductor devices; silicon compounds; wide band gap semiconductors; GaN; SiC; high-voltage power devices; power electronics; power switching devices; wide bandgap semiconductors; Gallium nitride; Power electronics; Power semiconductor switches; Silicon carbide; Wide band gap semiconductors;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
DOI :
10.1109/BIPOL.2004.1365779
