DocumentCode :
2064812
Title :
High-voltage SiC and GaN power devices
Author :
Chow, T. Paul
Author_Institution :
Rensselaer Polytechnic Institute
fYear :
2004
fDate :
13-14 Sept. 2004
Firstpage :
199
Lastpage :
200
Keywords :
Aluminum gallium nitride; Bipolar transistors; Gallium nitride; HEMTs; MOSFETs; Power semiconductor switches; Rectifiers; Silicon carbide; Thyristors; Wide band gap semiconductors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
Type :
conf
DOI :
10.1109/BIPOL.2004.1365780
Filename :
1365780
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2064812
بازگشت