Title :
Impact of profile design and scaling on large signal performance of SiGe HBTs
Author :
Pan, Jun ; Niu, Guofu ; Joseph, Alvin ; Harame, David L.
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA
Abstract :
This paper experimentally investigates the large signal performance of SiGe HBTs, including the impact of SiGe profile, breakdown voltage-speed tradeoff, and technology scaling. An inevitable tradeoff between optimum small signal gain/noise performance and large signal linearity is identified, and implications for profile optimization are established. Besides the expected small signal performance improvement, the 200 GHz SiGe technology shows an impressive large signal performance with a 36% power added efficiency at 20 GHz without any matching network for a supply voltage of only 1.1 V.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device breakdown; semiconductor materials; 1.1 V; 20 GHz; 200 GHz; 36 percent; HBT large signal performance; SiGe; breakdown voltage-speed tradeoff; large signal linearity; profile optimization; small signal gain/noise performance; technology scaling; Breakdown voltage; Electronic mail; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Microelectronics; RF signals; Radio frequency; Signal design; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
DOI :
10.1109/BIPOL.2004.1365782
