DocumentCode :
2064873
Title :
Vertical profile design and transit time analysis of nano-scale SiGe HBTs for Terahertz fT
Author :
Shi, Yun ; Niu, Guofu
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA
fYear :
2004
fDate :
13-14 Sept. 2004
Firstpage :
213
Lastpage :
216
Abstract :
We present a nano-scale SiGe HBT design for above Terahertz fT. The graded profile is shown to produce better performance than the box profile with the same total Ge (and hence film stability). A 2000 GHz·V fT×BVCEO is shown in simulations using the graded Ge profile.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; nanoelectronics; semiconductor device models; semiconductor materials; submillimetre wave transistors; HBT vertical profile design; SiGe; Terahertz transistors; box profile; film stability; graded profile; nanoscale HBT; transit time analysis; Design engineering; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Medical simulation; Microelectronics; Nanoscale devices; Silicon germanium; Statistics; Submillimeter wave technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
Type :
conf
DOI :
10.1109/BIPOL.2004.1365783
Filename :
1365783
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2064873
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