DocumentCode
2064897
Title
On the suitability of SiGe HBTs for high-temperature (to 300°) electronics
Author
Chen, Tianbing ; Kuo, Wei-Min Lance ; Zhao, Enhai ; Liang, Qingqing ; Jin, Zhenrong ; Cressler, John D. ; Joseph, Alvin J.
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2004
fDate
13-14 Sept. 2004
Firstpage
217
Lastpage
220
Abstract
The first comprehensive investigation of the high-temperature operation of SiGe HBTs is presented, and demonstrates that, contrary to popular opinion, SiGe HBTs are well-suited for many electronics applications operating at temperatures as high as 300°C.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; high-temperature electronics; semiconductor materials; 300 degC; HBT; SiGe; high-temperature electronics; Aerospace electronics; Aerospace industry; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; Industrial electronics; Nuclear electronics; Silicon germanium; Space technology; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN
0-7803-8618-3
Type
conf
DOI
10.1109/BIPOL.2004.1365784
Filename
1365784
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