DocumentCode
2064964
Title
230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology
Author
Chevalier, P. ; Fellous, C. ; Rubaldo, L. ; Dutartre, D. ; Laurens, M. ; Jagueneau, T. ; Leverd, F. ; Bord, S. ; Richard, C. ; Lenoble, D. ; Bonnouvrier, J. ; Marty, M. ; Perrotin, A. ; Gloria, D. ; Saguin, F. ; Barbalat, B. ; Beerkens, R. ; Zerounian, N.
Author_Institution
STMicroelectronics, Crolles, France
fYear
2004
fDate
13-14 Sept. 2004
Firstpage
225
Lastpage
228
Abstract
This paper describes a 230 GHz self-aligned SiGeC HBT featuring a selective epitaxial base and an arsenic-doped monocrystalline emitter. These technical choices are presented and discussed with respect to BiCMOS performance objectives and integration constraints.
Keywords
BiCMOS integrated circuits; arsenic; germanium compounds; heterojunction bipolar transistors; millimetre wave bipolar transistors; silicon compounds; wide band gap semiconductors; 230 GHz; 90 nm; As; BiCMOS technology; SiGeC; arsenic-doped monocrystalline emitter; selective epitaxial base; self-aligned HBT; Artificial intelligence; Automotive engineering; BiCMOS integrated circuits; CMOS technology; Cutoff frequency; Epitaxial growth; Heterojunction bipolar transistors; Laser radar; Lithography; Optical fiber communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN
0-7803-8618-3
Type
conf
DOI
10.1109/BIPOL.2004.1365786
Filename
1365786
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