DocumentCode :
2064964
Title :
230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology
Author :
Chevalier, P. ; Fellous, C. ; Rubaldo, L. ; Dutartre, D. ; Laurens, M. ; Jagueneau, T. ; Leverd, F. ; Bord, S. ; Richard, C. ; Lenoble, D. ; Bonnouvrier, J. ; Marty, M. ; Perrotin, A. ; Gloria, D. ; Saguin, F. ; Barbalat, B. ; Beerkens, R. ; Zerounian, N.
Author_Institution :
STMicroelectronics, Crolles, France
fYear :
2004
fDate :
13-14 Sept. 2004
Firstpage :
225
Lastpage :
228
Abstract :
This paper describes a 230 GHz self-aligned SiGeC HBT featuring a selective epitaxial base and an arsenic-doped monocrystalline emitter. These technical choices are presented and discussed with respect to BiCMOS performance objectives and integration constraints.
Keywords :
BiCMOS integrated circuits; arsenic; germanium compounds; heterojunction bipolar transistors; millimetre wave bipolar transistors; silicon compounds; wide band gap semiconductors; 230 GHz; 90 nm; As; BiCMOS technology; SiGeC; arsenic-doped monocrystalline emitter; selective epitaxial base; self-aligned HBT; Artificial intelligence; Automotive engineering; BiCMOS integrated circuits; CMOS technology; Cutoff frequency; Epitaxial growth; Heterojunction bipolar transistors; Laser radar; Lithography; Optical fiber communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
Type :
conf
DOI :
10.1109/BIPOL.2004.1365786
Filename :
1365786
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2064964
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