Title :
Lateral and vertical scaling of a QSA HBT for a 0.13μm 200GHz SiGe:C BiCMOS technology
Author :
Van Huylenbroeck, S. ; Sibaja-Hernandez, A. ; Piontek, A. ; Choi, L.J. ; Xu, M.W. ; Ouassif, N. ; Vleugels, F. ; Van Wichelen, K. ; Witters, L. ; Kunnen, E. ; Leray, P. ; Devriendt, K. ; Shi, X. ; Loo, R. ; Decoutere, S.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
A 200 GHz Ft SiGe:C HBT has been integrated into a 0.13 μm BiCMOS technology. A previous generation low complexity quasi self-aligned architecture (QSA) is scaled down both in a lateral and vertical way. Lateral sizing is obtained by using present-day step and scan tools. Vertical sizing is achieved by reducing the thermal budget of the active module and by an aggressive scaling of the SiGe:C base epitaxial layer. A deep trench module, featuring a thick oxide liner, has been developed. Excellent DC parameters and peak Ft/Fmax values of 200/160 GHz are demonstrated. The CMOS device characteristics remain unchanged by applying low thermal budget processing in the bipolar module.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; carbon; heterojunction bipolar transistors; isolation technology; millimetre wave bipolar transistors; semiconductor materials; 0.13 micron; 160 GHz; 200 GHz; BiCMOS technology; CMOS device characteristics; HBT lateral scaling; HBT vertical scaling; QSA HBT; SiGe:C; base epitaxial layer; deep trench module; low complexity quasi self-aligned architecture; thermal budget reduction; thick oxide liner; BiCMOS integrated circuits; CMOS process; CMOS technology; Capacitance; Epitaxial growth; Epitaxial layers; Frequency; Heterojunction bipolar transistors; Power generation; Substrates;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
DOI :
10.1109/BIPOL.2004.1365787
