DocumentCode :
2064979
Title :
QUBiC4X: An fT/fmax = 130/140GHz SiGe:C-BiCMOS manufacturing technology witg elite passives for emerging microwave applications
Author :
Deixler, P. ; Rodriguez, A. ; de Boer, W. ; Sun, H. ; Colclaser, R. ; Bower, D. ; Bell, N. ; Yao, A. ; Brock, R. ; Bouttement, Y. ; Hurkx, G.A.M. ; Tiemeijer, Luuk F. ; Paasschens, J.C.J. ; Huizing, H.G.A. ; Hartskeer, D. M H ; Agrarwal, P. ; Magnee, P.H.
Author_Institution :
Philips Semiconductors
fYear :
2004
fDate :
13-14 Sept. 2004
Firstpage :
233
Lastpage :
236
Keywords :
BiCMOS integrated circuits; CMOS technology; Copper; Electromigration; Inductors; Manufacturing; Microwave technology; Radio frequency; Temperature; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
Type :
conf
DOI :
10.1109/BIPOL.2004.1365788
Filename :
1365788
Link To Document :
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