2064998

A low complexity 0.13 μ SiGe BiCMOS technology for wireless and mixed signal applications

Lanzerotti, L. ; Feilchenfeld, N. ; Coolbaugh, D. ; Slinkman, J. ; Gray, P. ; Sheridan, D. ; Higgins, J. ; Hodge, W. ; Gordon, M. ; Larsen, T. ; Gautsch, M. ; Lindgren, P. ; Murty, R. ; Rascoe, J. ; Watson, K. ; Stamper, T. ; Eshun, E. ; He, J. ; Downes,

IBM Microelectronics Division

2004

13-14 Sept. 2004

237

240

BiCMOS integrated circuits; CMOS technology; Costs; Electric breakdown; FETs; Foundries; Germanium silicon alloys; Implants; Isolation technology; Silicon germanium;

English

ieee

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

0-7803-8618-3

conf

10.1109/BIPOL.2004.1365789

1365789