Title :
SiC Power MOSFET modeling challenges
Author :
Pratap, Rajendra ; Singh, R.K. ; Agarwal, Vineeta
Author_Institution :
Dept. of Electr. Eng., Motilal Nehru Nat. Inst. of Technol., Allahabad, India
Abstract :
SiC Power MOSFETs show a huge potential for high voltage, high temperature, high-power and high-frequency power electronic applications. Recently SiC MOSFETs were being made available in market. It is important to have spice models to validate the circuit using such high performance devices because it is not always possible to put the real hardware in place even without validating the circuit biasing. In this paper we have tried to bring out the challenges involved in coming up with a valid, industrially useful spice model for SiC MOSFETs.
Keywords :
II-VI semiconductors; SPICE; high-temperature electronics; high-voltage techniques; power MOSFET; power electronics; semiconductor device models; silicon compounds; wide band gap semiconductors; SPICE models; SiC; circuit biasing; high performance devices; high temperature electronics; high voltage electronics; high-frequency power electronic applications; high-power electronics; power MOSFET modeling challenges; Immune system; Integrated circuit modeling; MOSFET circuits; Mathematical model; SPICE; Silicon; Silicon carbide; Power MOSFET; SiC(Silicon Carbide); Spice Model;
Conference_Titel :
Engineering and Systems (SCES), 2012 Students Conference on
Conference_Location :
Allahabad, Uttar Pradesh
Print_ISBN :
978-1-4673-0456-6
DOI :
10.1109/SCES.2012.6199109
