Title :
Above 8GHz Static T-Flip-Flop Operation using FT=22.9GHz GaAs MESFETs
Author :
Riishoj, J. ; Danielsen, P.
Author_Institution :
Center for Broadband Telecommunications (CBT), Technical University of Denmark, Building 348, DK-2800 Lyngby, Denmark.
Abstract :
A static SCFL Toggle Flip-Flop GaAs IC having maximum operating frequency of Fdiv=8.25GHz has been designed using a commercially available GaAs MESFET foundry service. The average Ft for the present wafer is Ft=22.9GHz giving a very high Fdiv/Ft-ratio of Fdiv/Ft=0.36. In addition output voltage transition times of Tt(20%-80%)=35ps are obtained by implementation of a novel output driver design.
Keywords :
Driver circuits; FETs; Foundries; Frequency conversion; Gallium arsenide; MESFET integrated circuits; Master-slave; Transconductance; Transistors; Voltage;
Conference_Titel :
Microwave Conference, 1992. 22nd European
Conference_Location :
Helsinki, Finland
DOI :
10.1109/EUMA.1992.335686
