Title :
The use of TCAD in semiconductor technology development
Author_Institution :
IBM Gen. Technol. Div., Essex Junction, VT, USA
Abstract :
Technology computer aided design (TCAD) comprises a broad range of modeling and analysis activities that consist of detailed simulation of IC lithographic and fabrication processes, single- or multiple-device electrical performances and extraction of discrete parameters for equivalent circuit models. In this tutorial presentation, the author discusses some underlying physical models and their numerical implementation into TCAD software. The TCAD applications utilized in the development of DRAMs in the IBM General Technology Division laboratory over the past 15 years are reviewed. The present development activities, so that the TCAD suite of tools can continue to provide high leverage capabilities to device and process engineers, are also discussed. The author highlights the need for three-dimensional modeling of these structures, the need for accurate physical models for these tools, and the computational and visualization aspects that need to be overcome to provide effective TCAD tools for process and device engineers
Keywords :
electronic engineering computing; integrated circuit technology; lithography; semiconductor device models; semiconductor technology; DRAMs; IBM; IC lithographic processes; TCAD; computer aided design; discrete parameters extraction; equivalent circuit models; fabrication processes; leakage model; numerical implementation; physical models; semiconductor technology development; technology CAD; three-dimensional modeling; tool suite; trench model; Analytical models; Application software; Circuit analysis computing; Computational modeling; Computer simulation; Equivalent circuits; Fabrication; Integrated circuit modeling; Numerical models; Performance analysis;
Conference_Titel :
Custom Integrated Circuits Conference, 1991., Proceedings of the IEEE 1991
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0015-7
DOI :
10.1109/CICC.1991.164016
