DocumentCode :
2065660
Title :
22.9 A 1310nm 3D-integrated silicon photonics Mach-Zehnder-based transmitter with 275mW multistage CMOS driver achieving 6dB extinction ratio at 25Gb/s
Author :
Cignoli, Marco ; Minoia, Gabriele ; Repossi, Matteo ; Baldi, Daniele ; Ghilioni, Andrea ; Temporiti, Enrico ; Svelto, Francesco
Author_Institution :
Univ. of Pavia, Pavia, Italy
fYear :
2015
fDate :
22-26 Feb. 2015
Firstpage :
1
Lastpage :
3
Abstract :
In this scenario, this work presents a complete 25Gb/s silicon photonics electro-optical transmitter front-end comprising an MZM, using carrier depletion P-N junctions and operating at 1310nm wavelength, and a power-efficient CMOS driver. The transmitter optical path is integrated on STMicroelectronics 3Dcompatible silicon-photonics platform (PIC25G), which implements only optical devices in the front-end of line (FEOL) [4]. The electronic IC, realized in 65nm bulk CMOS technology, is 3D-assembled on top of the photonic IC by means of 20μm-diameter copper pillars, minimizing the interconnection parasitic capacitance. This 1310nm 25Gb/s silicon photonics electro-optical transmitter reports error-free operation with wide open optical eye diagrams at a competitive dynamic extinction ratio (ER) of up to 6dB using a depletion-mode MZM.
Keywords :
CMOS analogue integrated circuits; driver circuits; elemental semiconductors; integrated optics; integrated optoelectronics; optical transmitters; silicon; three-dimensional integrated circuits; 3D-assembly; 3D-integrated silicon photonics Mach-Zehnder-based transmitter; FEOL; PIC25G; STMicroelectronics 3Dcompatible silicon-photonics platform; Si; bit rate 25 Gbit/s; bulk CMOS technology; carrier depletion P-N junctions; copper pillars; depletion-mode MZM; dynamic extinction ratio; electronic IC; error-free operation; extinction ratio; front-end of line; interconnection parasitic capacitance; multistage CMOS driver; open optical eye diagrams; optical devices; photonic IC; power-efficient CMOS driver; silicon photonics electro-optical transmitter front-end; size 20 mum; size 65 nm; transmitter optical path; wavelength 1310 nm; CMOS integrated circuits; Delays; Erbium; Optical modulation; Optical transmitters; Silicon photonics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid- State Circuits Conference - (ISSCC), 2015 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-6223-5
Type :
conf
DOI :
10.1109/ISSCC.2015.7063103
Filename :
7063103
Link To Document :
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