Title :
An InAs/InP(100) QD waveguide photodetector for OCT application
Author :
Jiao, Y. ; Tilma, B.W. ; Kotani, J. ; Nötzel, R. ; Smit, M.K. ; Bente, E.A.J.M.
Author_Institution :
COBRA, Eindhoven Univ. of Technol., Eindhoven, Netherlands
Abstract :
The application of the wavelength range of 1600 nm to 1800nm in optical coherent tomography (OCT) is attractive for its deeper penetration through the tissue due to a reduction of scattering. One of the important elements in the OCT setup is the photodetector. The performance of commercial standard InGaAs detectors is limited due to low response for wavelengths above 1600 nm and p-doped InGaAs detectors have a significantly higher noise level. Thus a low noise photodetector working efficiently in this wavelength region is desired. In this contribution, we present our first results on quantum-dot (QD) waveguide photodetectors, which are realized by applying a reverse-bias voltage on a quantum dot semiconductor optical amplifier (QDSOA).
Keywords :
III-V semiconductors; biological tissues; gallium arsenide; indium compounds; optical tomography; photodetectors; semiconductor optical amplifiers; semiconductor quantum dots; InAs-InP; InGaAs; OCT application; biological tissue; low noise photodetector; noise level; optical coherent tomography; quantum dot semiconductor optical amplifier; quantum-dot waveguide photodetectors; reverse-bias voltage; wavelength 1600 nm to 1800 nm; Biomedical measurements; Semiconductor device measurement;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
DOI :
10.1109/CLEOE.2011.5942902
