DocumentCode
2065873
Title
Lithography hotspot detection and mitigation in nanometer VLSI
Author
Jhih-Rong Gao ; Bei Yu ; Duo Ding ; Pan, David Z.
Author_Institution
Dept. of ECE, Univ. of Texas at Austin, Austin, TX, USA
fYear
2013
fDate
28-31 Oct. 2013
Firstpage
1
Lastpage
4
Abstract
With continued feature size scaling, even state of the art semiconductor manufacturing processes will often run into layouts with poor printability and yield. Identifying lithography hotspots is important at both physical verification and early physical design stages. While detailed lithography simulations can be very accurate, they may be too computationally expensive for full-chip scale and physical design inner loops. Meanwhile, pattern matching and machine learning based hotspot detection methods can provide acceptable quality and yet fast turn-around-time for full-chip scale physical verification and design. In this paper, we discuss some key issues and recent results on lithography hotspot detection and mitigation in nanometer VLSI.
Keywords
VLSI; electronic engineering computing; learning (artificial intelligence); nanolithography; pattern clustering; pattern matching; semiconductor process modelling; early physical design stages; feature size scaling; full-chip scale physical verification; lithography hotspot mitigation; lithography hotspots; machine learning based hotspot detection methods; nanometer VLSI; pattern matching based hotspot detection methods; physical design inner loops; semiconductor manufacturing processes; Feature extraction; Kernel; Layout; Lithography; Pattern matching; Routing; Standards;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location
Shenzhen
ISSN
2162-7541
Print_ISBN
978-1-4673-6415-7
Type
conf
DOI
10.1109/ASICON.2013.6811917
Filename
6811917
Link To Document