• DocumentCode
    2065873
  • Title

    Lithography hotspot detection and mitigation in nanometer VLSI

  • Author

    Jhih-Rong Gao ; Bei Yu ; Duo Ding ; Pan, David Z.

  • Author_Institution
    Dept. of ECE, Univ. of Texas at Austin, Austin, TX, USA
  • fYear
    2013
  • fDate
    28-31 Oct. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    With continued feature size scaling, even state of the art semiconductor manufacturing processes will often run into layouts with poor printability and yield. Identifying lithography hotspots is important at both physical verification and early physical design stages. While detailed lithography simulations can be very accurate, they may be too computationally expensive for full-chip scale and physical design inner loops. Meanwhile, pattern matching and machine learning based hotspot detection methods can provide acceptable quality and yet fast turn-around-time for full-chip scale physical verification and design. In this paper, we discuss some key issues and recent results on lithography hotspot detection and mitigation in nanometer VLSI.
  • Keywords
    VLSI; electronic engineering computing; learning (artificial intelligence); nanolithography; pattern clustering; pattern matching; semiconductor process modelling; early physical design stages; feature size scaling; full-chip scale physical verification; lithography hotspot mitigation; lithography hotspots; machine learning based hotspot detection methods; nanometer VLSI; pattern matching based hotspot detection methods; physical design inner loops; semiconductor manufacturing processes; Feature extraction; Kernel; Layout; Lithography; Pattern matching; Routing; Standards;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2013 IEEE 10th International Conference on
  • Conference_Location
    Shenzhen
  • ISSN
    2162-7541
  • Print_ISBN
    978-1-4673-6415-7
  • Type

    conf

  • DOI
    10.1109/ASICON.2013.6811917
  • Filename
    6811917