Study on Dual Channel n-p-LDMOS Power Devices With Three Terminals

Author

Moufu Kong ; Wenfang Du ; Xingbi Chen

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

60

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

3508

Lastpage

3514

Abstract

Two dual channel three-terminal transmission-gate-like n-p-lateral double-diffused metal oxide semiconductor (n-p-LDMOS) power devices with majorities of both types for conduction are proposed. Based on the method of generating a control signal for one of the gates inside the devices, each proposed n-p-LDMOS device only needs one gate control signal. One of the power devices can be used as an n-LDMOS device and the other can be used as a p-LDMOS device. The safe operating area is widened than the conventional n-LDMOS because of the compensation of electric flux density introduced by electron and hole currents. In addition, the specific ON-resistances of the new devices are reduced by ~ 20% and over 23% compared with that of the conventional n-LDMOS, respectively. The proposed power devices and their control methods are analyzed and verified by numerical simulations.

Keywords

MIS devices; compensation; numerical analysis; signal generators; control signal generation; dual channel three-terminal transmission- gate-like n-p-LDMOS power device; electric flux density compensation; electron current; hole current; n-p-lateral double-diffused metal oxide semiconductor power device; numerical simulation; specific ON-resistance; Delays; Electrodes; Logic gates; Manganese; Resistors; Signal processing; Simulation; Majority carriers; SOA; n-p-LDMOS; specific ON-resistance; transmission gate;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2275076

Filename

6594840