DocumentCode :
2066010
Title :
PEALD Ru/RuOx films for ULSI applications and its transition control between metal and metal oxide
Author :
Chun-Min Zhang ; Qing-Qing Sun ; Peng-Fei Wang ; Zhang, David Wei
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
fYear :
2013
fDate :
28-31 Oct. 2013
Firstpage :
1
Lastpage :
4
Abstract :
Ruthenium (Ru) is a promising material for the future backend of line of semiconductor technologies beyond 20 nm. In this work, high quality Ru and ruthenium oxide (RuOx) thin films were grown on SiO2 substrates by plasma-enhanced atomic layer deposition (PEALD) technique using bis-(ethylcyclopentadienyl)-ruthenium [Ru(EtCp)2] as the precursor and oxygen (O2) plasma as the reducing agent. The impacts of O2 plasma and H2 annealing on the film properties will be discussed. Finally, we found a feasible method to control the transition between Ru and RuOx films.
Keywords :
ULSI; annealing; atomic layer deposition; plasma deposition; ruthenium compounds; silicon compounds; Ru-RuOx; SiO2; ULSI; annealing; bis-(ethylcyclopentadienyl)-ruthenium; plasma enhanced atomic layer deposition; plasma-enhanced atomic layer deposition; semiconductor technologies; size 20 nm; thin films; Conductivity; Electrodes; Films; Metals; Plasmas; Rapid thermal annealing; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location :
Shenzhen
ISSN :
2162-7541
Print_ISBN :
978-1-4673-6415-7
Type :
conf
DOI :
10.1109/ASICON.2013.6811922
Filename :
6811922
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2066010
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