PEALD Ru/RuOx films for ULSI applications and its transition control between metal and metal oxide

Author

Chun-Min Zhang ; Qing-Qing Sun ; Peng-Fei Wang ; Zhang, David Wei

Author_Institution

State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China

fYear

2013

fDate

28-31 Oct. 2013

Firstpage

1

Lastpage

4

Abstract

Ruthenium (Ru) is a promising material for the future backend of line of semiconductor technologies beyond 20 nm. In this work, high quality Ru and ruthenium oxide (RuO_x) thin films were grown on SiO₂ substrates by plasma-enhanced atomic layer deposition (PEALD) technique using bis-(ethylcyclopentadienyl)-ruthenium [Ru(EtCp)₂] as the precursor and oxygen (O₂) plasma as the reducing agent. The impacts of O₂ plasma and H₂ annealing on the film properties will be discussed. Finally, we found a feasible method to control the transition between Ru and RuO_x films.

Keywords

ULSI; annealing; atomic layer deposition; plasma deposition; ruthenium compounds; silicon compounds; Ru-RuO_x; SiO₂; ULSI; annealing; bis-(ethylcyclopentadienyl)-ruthenium; plasma enhanced atomic layer deposition; plasma-enhanced atomic layer deposition; semiconductor technologies; size 20 nm; thin films; Conductivity; Electrodes; Films; Metals; Plasmas; Rapid thermal annealing; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC (ASICON), 2013 IEEE 10th International Conference on

Conference_Location

Shenzhen

ISSN

2162-7541

Print_ISBN

978-1-4673-6415-7

Type

conf

DOI

10.1109/ASICON.2013.6811922

Filename

6811922