• DocumentCode
    2066154
  • Title

    Characterizing Highly Efficient Millimetre Wave Single Barrier Varactor Multiplier Diodes

  • Author

    Grönqvist, H. ; Nilsen, S.M. ; Rydberg, A. ; Kollberg, E.

  • Author_Institution
    Dept. of Applied Electron Physics, Chalmers University of Technology, Göteborg, Sweden
  • Volume
    1
  • fYear
    1992
  • fDate
    5-9 Sept. 1992
  • Firstpage
    479
  • Lastpage
    484
  • Abstract
    This paper addresses characterization and design of single barrier varactors (SBV) for multiplier applications. There is an optimum ratio between the maximum and minimum capacitance for the diode used as an multiplier. The embedding impedance requirement is analyzed. Different combinations of epitaxial materials are investigated experimentally and theoretically. It is shown that diodes based on InAs are much more promising than those based on GaAs or GaInAs materials. It is also shown that a tripler using an InAs SBV diode should yield a considerably improved performance over a similarly optimized Schottky diode tripler.
  • Keywords
    Capacitance; Conducting materials; Gallium arsenide; Impedance; Photonic band gap; Schottky diodes; Semiconductor diodes; Semiconductor materials; Substrates; Varactors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1992. 22nd European
  • Conference_Location
    Helsinki, Finland
  • Type

    conf

  • DOI
    10.1109/EUMA.1992.335712
  • Filename
    4135495
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2066154