Title :
Compact modeling of the diode reverse recovery effect for leading developments of power electronic applications
Author :
Miyake, M. ; Matsuura, Kanta ; Ueno, Atsushi
Author_Institution :
HiSIM Res. Center, Hiroshima Univ., Higashi-Hiroshima, Japan
Abstract :
SPICE modeling of the diode reverse recovery effect is discussed. This effect is very important for the developments of power electronic circuit applications such as motor-drive inverters and power conditioners. With the dynamic carrier-distribution-based modeling approach, the reverse recovery behaviors are explained, where the nonquasi-static (NQS) behavior of carriers in the drift region is considered. Its reverse recovery modeling ability is verified with a two-dimensional (2D) device simulator, in comparison to the conventional lumped-charge modeling technique.
Keywords :
SPICE; power semiconductor diodes; semiconductor device models; 2D device simulator; NQS behavior; SPICE modeling; compact modeling; diode reverse recovery effect; drift region; dynamic carrier-distribution-based modeling approach; lumped-charge modeling technique; motor-drive inverters; nonquasi-static behavior; power conditioners; power diodes; power electronic circuit; two-dimensional device simulator; Computational modeling; Integrated circuit modeling; Numerical models; P-i-n diodes; Power electronics; Semiconductor device modeling;
Conference_Titel :
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-6415-7
DOI :
10.1109/ASICON.2013.6811933
