DocumentCode :
2066286
Title :
Lagrangian relaxation based pin assignment and Through-Silicon Via planning for 3-D SoCs
Author :
Wei Zhong ; Song Chen ; Yang Geng ; Yoshimura, Tetsuzo
Author_Institution :
Grad. Sch. of IPS, Waseda Univ., Kitakyushu, Japan
fYear :
2013
fDate :
28-31 Oct. 2013
Firstpage :
1
Lastpage :
4
Abstract :
As technology advances, 3-D stacking of silicon layers that promises a solution to significantly alleviate the interconnect problem faced by current System-on-Chips (SoCs). In 3-D SoCs, judicious assignment of the pin locations and related vertical Through-Silicon Vias (TSVs) can improve the routing area and interconnection delay by reducing wire length and wire congestion. In this paper, we propose a significant algorithm to locate pin and TSV positions simultaneously for the two-pin net list in 3-D SoCs. Given a floorplan result, we formulate the pin assignment and TSV planning problem as a min-cost multi-commodity flow model and solve it based on lagrangian relaxation. By relaxing the capacity constraints in pin and TSV locations, we transform the min-cost multi-commodity flow problem to several min-cost max-flow problems that can be solved independently. A heuristic algorithm is also proposed to improve the result of lagrangian relaxation to guarantee the feasible solution. Experimental results show the effectiveness of the proposed algorithm.
Keywords :
circuit optimisation; integrated circuit interconnections; integrated circuit layout; minimisation; system-on-chip; three-dimensional integrated circuits; 3D SoC; floorplan result; interconnection delay; lagrangian relaxation; min-cost max-flow problems; min-cost multicommodity flow problem; pin assignment; routing area; through silicon via planning; wire congestion; wire length reduction; Integrated circuit interconnections; Pins; Planning; Routing; System-on-chip; Through-silicon vias; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location :
Shenzhen
ISSN :
2162-7541
Print_ISBN :
978-1-4673-6415-7
Type :
conf
DOI :
10.1109/ASICON.2013.6811934
Filename :
6811934
Link To Document :
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