DocumentCode
2066492
Title
A Ku-Band Low-Noise HEMT Amplifier MMIC for Receiver Applications
Author
Wenger, J. ; Klaassen, A. ; Narozny, P.
Author_Institution
Daimler-Benz AG, Research Center, Wilhelm-Runge-Str. 11, D-7900 Ulm (Germany)
Volume
1
fYear
1992
fDate
5-9 Sept. 1992
Firstpage
565
Lastpage
569
Abstract
A three stage monolithic low-noise HEMT amplifier has been designed and fabricated for Ku-band receiver applications. The key element for the ultra low noise figure of the amplifier is an AlGaAs/GaAs HEMT with 0.3 ¿m gate length and a gate width of 120 ¿m. Single devices have shown a noise figure of 0.7 dB and an associated gain of 11.5 dB at 12 GHz. A monolithic amplifier chip has demonstrated a gain of 21.5 dB and a very low noise figure of 1.4 dB at 13 GHz, the input and output return losses are better than ¿30 dB and ¿20 dB, respectively. These data represent the best results yet reported for a low-noise Ku-band MMIC amplifier on GaAs.
Keywords
Gain; Gallium arsenide; HEMTs; Low-noise amplifiers; MMICs; Metallization; Microwave circuits; Noise figure; Noise measurement; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1992. 22nd European
Conference_Location
Helsinki, Finland
Type
conf
DOI
10.1109/EUMA.1992.335765
Filename
4135509
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