Title :
Low-Noise, Low DC Power Linear FET
Author :
Ikäläinen, Pertti K. ; Witkowski, Larry C. ; Kao, Yung-Chung
Author_Institution :
Texas Instruments, Inc., Central Research laboratories, Dallas, Texas.
Abstract :
A two-tone third-order output intercept point (OIP3) of 45 dBm has been achieved at 10 GHz with a 280-¿m GaAs MBE FET using only 248 mW of DC bias giving an OIP3/Pdc ratio of 128. Noise figure at that bias and tuning was 3.23 dB. Minimum noise figure of the same device was 1.43 dB.
Keywords :
Dynamic range; Energy consumption; FETs; Gallium arsenide; Linearity; Molecular beam epitaxial growth; Noise figure; Noise measurement; Transconductance; Voltage;
Conference_Titel :
Microwave Conference, 1992. 22nd European
Conference_Location :
Helsinki, Finland
DOI :
10.1109/EUMA.1992.335766
