Title :
A HFET millimeterwave resistive mixer
Author :
Zirath, Herbert ; Angelov, Ilcho ; Rorsman, Niklas
Author_Institution :
Applied Electron Physics, Chalmers University of Technology, Göteborg, Sweden
Abstract :
A millimeterwave resistive mixer based on a heterostructure field effect transistor (HFET) is described. A minimum conversion loss of 8 dB, including losses in the connectors, filters, substrates etc, is obtained in the frequency range 40-45 GHz. This is the highest frequency of operation reported for this type of mixer.
Keywords :
Circuit noise; Circuit simulation; Frequency measurement; Gallium arsenide; HEMTs; MODFETs; Mixers; Scattering parameters; Semiconductor device modeling; Voltage;
Conference_Titel :
Microwave Conference, 1992. 22nd European
Conference_Location :
Helsinki, Finland
DOI :
10.1109/EUMA.1992.335773
