A New Approach for FET Modelling

A FET model is presented whichl is based on an analytical approximation of the velocity overshoot. The bias dependent peak velocity and the electric field in short-channel-FET´s are described by means of a new principle in physical simulation. Thiis approach is equivalent to the use of a saturation velocity, whiiclh depends not only on gate-length but also on bias. Surface effects are taken into account in a simple way. The theoretical results are in good agreement with experimental data of the small signal and noise behaviour of a GaAs-MESFET.