Title :
Two sides of pulse quenching effect on the single-event transient pulse width at circuit-level
Author :
Bin Liang ; Yankang Du
Author_Institution :
Coll. of Comput., Nat. Univ. of Defense Technol., Changsha, China
Abstract :
Pulse quenching effect is evaluated at circuit-level. Simulation results present that pulse quenching effect is not always beneficial to mitigate single-event transient (SET) pulse width. It also could increase the SET pulse width.
Keywords :
integrated circuit reliability; integrated circuit testing; radiation hardening (electronics); circuit level evaluation; pulse quenching effect; single event transient pulse width; Benchmark testing; Circuit topology; Combinational circuits; Reliability; Simulation; Standards; Transient analysis;
Conference_Titel :
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-6415-7
DOI :
10.1109/ASICON.2013.6811956
