DocumentCode
2066866
Title
A novel test scheme for NAND flash memory based on built-in oscillator ring
Author
Si Chen ; Xiaole Cui ; Chung-Len Lee
Author_Institution
Shenzhen Grad. Sch., Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
fYear
2013
fDate
28-31 Oct. 2013
Firstpage
1
Lastpage
4
Abstract
Physical defects in the cells of the NAND Flash memory fluctuate the current flowing through the memory string. Two oscillator ring based test schemes for NAND Flash memory are proposed. The oscillator ring scheme for single column has good diagnostic capability, and the double ring scheme are sensitive to both SA0/SA1 faults and some soft errors. Experimental results validated the effectiveness of these methods.
Keywords
fault diagnosis; flash memories; integrated circuit testing; oscillators; NAND flash memory; SA0 fault; SA1 fault; built-in oscillator ring; fault diagnosis; memory string; physical defects; soft error; Circuit faults; Delays; Flash memories; Ring oscillators; Sensors; Testing; DfT; NAND Flash Memory; Oscillator Ring;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location
Shenzhen
ISSN
2162-7541
Print_ISBN
978-1-4673-6415-7
Type
conf
DOI
10.1109/ASICON.2013.6811957
Filename
6811957
Link To Document