DocumentCode :
2066983
Title :
EP1: Moore´s law challenges below 10nm: Technology, design and economic implications
Author :
Sheu, Bing ; Wilcox, Kathy ; Keshavarzi, A M ; Antoniadis, Dimitri
Author_Institution :
TSMC, Hsinchu, Taiwan
fYear :
2015
fDate :
22-26 Feb. 2015
Firstpage :
1
Lastpage :
1
Abstract :
Moore´s Law has governed advances of silicon technology for more than four decades, providing a tremendous reduction in cost per transistor. Device geometry, packing density, speed performance, and manufacturing cost of a single transistor have scaled together-according to Dennard scaling rule. Approaching the sub-10nm era and beyond, Moore´s Law faces serious challenges in the near future (5–6 years). Device geometry/density/performance/cost will not scale simultaneously anymore. What are the new scaling rules for logic and memory? Researchers are racing to address 3 scenarios: 1) extending silicon, 2) beyond silicon, and 3) beyond CMOS.
Keywords :
Computer architecture; Economics; Performance evaluation; Silicon; Technological innovation; Three-dimensional displays; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid- State Circuits Conference - (ISSCC), 2015 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
978-1-4799-6223-5
Type :
conf
DOI :
10.1109/ISSCC.2015.7063150
Filename :
7063150
Link To Document :
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