DocumentCode
2067211
Title
Reduced Lorentzian linewidth for monolithic widely tunable C-band lasers utilising InGaAlAs/InP active region
Author
Davies, S.C. ; Whitbread, N.D. ; Ward, A.J. ; Arnold, M. ; Griffin, R.A. ; Wale, M.J.
Author_Institution
Oclaro Technol. Ltd., Towcester, UK
fYear
2011
fDate
22-26 May 2011
Firstpage
1
Lastpage
1
Abstract
In this paper we report a reduction of Lorentzian linewidth for a C-band monolithic tunable digital supermode (DS) distributed Bragg reflector (DBR) laser, A prototype device containing a InGaAlAs/InP aluminium quaternary [Al(Q)] active region is compared alongside a device containing a traditionally used InGaAsP/InP phosphorus quaternary [P(Q)] active region. The DBR tuning regions and section dimensions for both devices are identical.
Keywords
III-V semiconductors; aluminium; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser modes; laser tuning; phosphorus; semiconductor lasers; Al; InGaAsP-InP; P; aluminium quaternary active region; digital supermode; distributed Bragg reflector laser; phosphorus quaternary active region; reduced Lorentzian linewidth; tunable C-band lasers; Gratings;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location
Munich
ISSN
Pending
Print_ISBN
978-1-4577-0533-5
Electronic_ISBN
Pending
Type
conf
DOI
10.1109/CLEOE.2011.5942989
Filename
5942989
Link To Document