Title :
Reduced Lorentzian linewidth for monolithic widely tunable C-band lasers utilising InGaAlAs/InP active region
Author :
Davies, S.C. ; Whitbread, N.D. ; Ward, A.J. ; Arnold, M. ; Griffin, R.A. ; Wale, M.J.
Author_Institution :
Oclaro Technol. Ltd., Towcester, UK
Abstract :
In this paper we report a reduction of Lorentzian linewidth for a C-band monolithic tunable digital supermode (DS) distributed Bragg reflector (DBR) laser, A prototype device containing a InGaAlAs/InP aluminium quaternary [Al(Q)] active region is compared alongside a device containing a traditionally used InGaAsP/InP phosphorus quaternary [P(Q)] active region. The DBR tuning regions and section dimensions for both devices are identical.
Keywords :
III-V semiconductors; aluminium; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser modes; laser tuning; phosphorus; semiconductor lasers; Al; InGaAsP-InP; P; aluminium quaternary active region; digital supermode; distributed Bragg reflector laser; phosphorus quaternary active region; reduced Lorentzian linewidth; tunable C-band lasers; Gratings;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
DOI :
10.1109/CLEOE.2011.5942989
