DocumentCode :
2067357
Title :
Guiding Architectural SRAM Models
Author :
Agrawal, Banit ; Sherwood, Timothy
Author_Institution :
California Univ., Santa Barbara
fYear :
2007
fDate :
1-4 Oct. 2007
Firstpage :
376
Lastpage :
382
Abstract :
Caches, block memories, predictors, state tables, and other forms of on-chip memory are continuing to consume a greater portion of processor designs with each passing year. Making good architectural decisions early in the design process requires a reasonably accurate model for these important structures. Dealing with continuously changing SRAM design practices and VLSI technologies make this a very difficult problem. Most hand-built memory models capture only a single parameterized design and fail to account for changes in design practice for different size memories or problems with wire scaling. Instead, in this paper we present a high level model that can be used to make simple analytical estimates. Our model is built using the characterization of almost 60 real memory designs from the past 15 years. Our model and the presented methodology can be used to calibrate even more detailed memory models for better accuracy. Despite all of the things that could have gone wrong over the past 15 years, we show that the memory density and delay can be estimated with simple and intuitive functions and we present a technique to automatically extract important scaling trends that can be used to make accurate estimates across a variety of technology and architectural parameters.
Keywords :
SRAM chips; VLSI; integrated circuit design; logic design; system-on-chip; SRAM design practices; VLSI technologies; architectural SRAM models; block memories; cache storage; on-chip memory; processor designs; state tables; CMOS technology; Circuits; Data mining; Delay estimation; Predictive models; Process design; Random access memory; Registers; Semiconductor device modeling; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer Design, 2006. ICCD 2006. International Conference on
Conference_Location :
San Jose, CA
ISSN :
1063-6404
Print_ISBN :
978-0-7803-9707-1
Electronic_ISBN :
1063-6404
Type :
conf
DOI :
10.1109/ICCD.2006.4380844
Filename :
4380844
Link To Document :
بازگشت