• DocumentCode
    2067736
  • Title

    Thermal Design of HBT Power Transistors for Mobile and Satellite Communications

  • Author

    Mezui-Mintsa, R. ; Tsouli, M. ; Enkonda, Z. ; Hassaïne, N. ; Riet, M. ; Villeforceix, B. ; Konczykowska, A. ; Vuye, S. ; Wang, H.

  • Author_Institution
    Centre National d´´Etudes des Télécommunications, Laboratoire de Bagneux, 196, avenue Henri Ravera, 92220 Bagneux (FRANCE)
  • Volume
    2
  • fYear
    1992
  • fDate
    5-9 Sept. 1992
  • Firstpage
    856
  • Lastpage
    859
  • Abstract
    HBT power transistors thermal analysis and its application to amplifier design are presented in this paper. Device analysis and optimization have been made with respect to the power handling capability. Power HBTs for mobile and satellite communications have been fabricated. A C-band MIC amplifier is also presented.
  • Keywords
    Current density; Electronic ballasts; Fingers; Frequency; Heterojunction bipolar transistors; Power amplifiers; Power transistors; Satellite communication; Temperature; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1992. 22nd European
  • Conference_Location
    Helsinki, Finland
  • Type

    conf

  • DOI
    10.1109/EUMA.1992.335812
  • Filename
    4135557
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2067736