DocumentCode :
2067897
Title :
Trends and Future Directions in Nano Structure Based Computing and Fabrication
Author :
Bahar, R. Iris
fYear :
2007
fDate :
1-4 Oct. 2007
Firstpage :
522
Lastpage :
527
Abstract :
As silicon CMOS devices are scaled down into the nanoscale regime, new challenges at both the device and system level are arising. While some of these challenges will be overcome in the near future, nanoscale devices will have high manufacturing defect rates and will operate at reduced noise margins, exposing computation to higher soft error rates. Thus, a key challenge for the future will be building fault and defect-tolerant computing systems. Researchers are looking to develop hybrid systems that combine on the same chip CMOS-based circuitry with any number of alternatives, including circuits composed of nanowire or carbon nanotube devices. The big advantage of including these new devices on the same chip is the increased device densities, and potential drop in fabrication costs. On the other hand, integrating very large numbers of devices on a single chip leads to questions of how to manage so many devices with tight constraints on cost, performance, power, and reliability, without having it become a design complexity nightmare. In this paper, we review some key issues and trends arising from nanostructure based computing and fabrication, while providing a few examples of defect-tolerant circuits and architectures currently being proposed as alternatives to "traditional" computing based exclusively on CMOS technology. These include hybrid nanowire/CMOS designs, reconfigurable or redundant architectures, and designs based on probabilistic computing. We end with a discussion on future challenges and direction in nanoscale computing.
Keywords :
CMOS technology; Circuit noise; Computer aided manufacturing; Computer architecture; Costs; Error analysis; Fabrication; Nanoscale devices; Noise reduction; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer Design, 2006. ICCD 2006. International Conference on
Conference_Location :
San Jose, CA, USA
ISSN :
1063-6404
Print_ISBN :
978-0-7803-9707-1
Electronic_ISBN :
1063-6404
Type :
conf
DOI :
10.1109/ICCD.2006.4380865
Filename :
4380865
Link To Document :
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