Title :
Optical and electrical properties of In.48(AlxGa(1-x)).52P grown by solid source MBE using a GaP decomposition source
Author_Institution :
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
Abstract :
The use of GaP as a source material for the generation of P2 is shown to lead to the growth of a wide range of phosphide materials with excellent optical and electrical qualities. The compatibility of this source with a conventional solid source molecular beam epitaxy system is demonstrated through the continuous use of this cell for over 5 years with no safety or materials issues arising. The application of this cell to the growth of state of the art optoelectronics and microwave devices is illustrated
Keywords :
III-V semiconductors; aluminium compounds; carrier density; deep level transient spectroscopy; gallium compounds; indium compounds; microwave devices; molecular beam epitaxial growth; optoelectronic devices; photoluminescence; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor growth; DLTS; GaP; GaP decomposition source; In0.48(AlxGa(1-x))0.52 ; In0.48(AlxGa(1-x))0.52 P growth; P2; P2 generation; carrier concentrations; carrier depth profiles; electrical properties; electrochemical CV profiling; microwave devices; optical properties; optoelectronic devices; phosphide materials growth; photoluminescence spectra; semiconductor films; solid source MBE; Gallium; Hydrogen; Indium phosphide; Mass spectroscopy; Monitoring; Optical pumping; Pumps; Solids; Temperature; Testing;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
Conference_Location :
Vienna
Print_ISBN :
0-7803-7049-X
DOI :
10.1109/EDMO.2001.974274
