Investigation of self-heating effects in AlGaN-GaN HEMTs

Author

Kuzmik, J. ; Javorka, P. ; Alam, A. ; Marso, M. ; Heuken, M. ; Kordos, P.

Author_Institution

Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia

fYear

2001

fDate

2001

Firstpage

21

Lastpage

26

Abstract

Self-heating effects in AlGaN-GaN HEMTs grown on sapphire are studied exploiting transistor DC characterization methods. A negative differential output resistance is observed for high power levels accompanied by a transistor transconductance decrease. An analytical formula for a source-drain current drop as a function of a parasitic source resistance is proposed to explain this behavior. The transistor source resistance is determined experimentally at different elevated temperatures to construct channel temperature vs. dissipated power transfer characteristics. It is found that the HEMT channel temperature increases rapidly with dissipated power and reaches values of ~200°C at 2.6 W/mm. The transistor thermal impedance was determined to be 67°CmmW^-1

Keywords

III-V semiconductors; electric heating; high electron mobility transistors; negative resistance; semiconductor device measurement; wide band gap semiconductors; 200 C; AlGaN-GaN; AlGaN-GaN HEMTs; HEMT channel temperature; channel temperature; dissipated power; dissipated power transfer; negative differential output resistance; parasitic source resistance; sapphire substrate; self-heating effects; source-drain current drop; transistor DC characterization methods; transistor source resistance; transistor thermal impedance; transistor transconductance; Aluminum gallium nitride; Contact resistance; Etching; Gallium nitride; HEMTs; Impedance; MODFETs; Temperature; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on

Conference_Location

Vienna

Print_ISBN

0-7803-7049-X

Type

conf

DOI

10.1109/EDMO.2001.974277

Filename

974277