Title :
Investigation of self-heating effects in AlGaN-GaN HEMTs
Author :
Kuzmik, J. ; Javorka, P. ; Alam, A. ; Marso, M. ; Heuken, M. ; Kordos, P.
Author_Institution :
Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
Abstract :
Self-heating effects in AlGaN-GaN HEMTs grown on sapphire are studied exploiting transistor DC characterization methods. A negative differential output resistance is observed for high power levels accompanied by a transistor transconductance decrease. An analytical formula for a source-drain current drop as a function of a parasitic source resistance is proposed to explain this behavior. The transistor source resistance is determined experimentally at different elevated temperatures to construct channel temperature vs. dissipated power transfer characteristics. It is found that the HEMT channel temperature increases rapidly with dissipated power and reaches values of ~200°C at 2.6 W/mm. The transistor thermal impedance was determined to be 67°CmmW-1
Keywords :
III-V semiconductors; electric heating; high electron mobility transistors; negative resistance; semiconductor device measurement; wide band gap semiconductors; 200 C; AlGaN-GaN; AlGaN-GaN HEMTs; HEMT channel temperature; channel temperature; dissipated power; dissipated power transfer; negative differential output resistance; parasitic source resistance; sapphire substrate; self-heating effects; source-drain current drop; transistor DC characterization methods; transistor source resistance; transistor thermal impedance; transistor transconductance; Aluminum gallium nitride; Contact resistance; Etching; Gallium nitride; HEMTs; Impedance; MODFETs; Temperature; Transconductance; Voltage;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
Conference_Location :
Vienna
Print_ISBN :
0-7803-7049-X
DOI :
10.1109/EDMO.2001.974277
