Title :
High-frequency properties of an abrupt heterojunction diode
Author_Institution :
Dept. of Microelectron., Brno Univ. of Technol., Czech Republic
Abstract :
Steady state and high frequency transmittance of the potential barrier at the abrupt np+-heterojunction is investigated. A general method of simulation based on the one-electron tunnelling and the time-dependent Hamiltonian is presented. Numerical results are obtained for a model structure of the n-AlGaAs/p+-GaAs diode within the approximation of one and two energy quanta emission or absorption
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; millimetre wave diodes; p-n heterojunctions; semiconductor device models; tunnelling; AlGaAs-GaAs; abrupt heterojunction diode; energy quanta absorption; energy quanta emission; high-frequency properties; mm-wave diodes; model structure; n-AlGaAs/p+-GaAs diode; np+-heterojunction; one-electron tunnelling; potential barrier; time-dependent Hamiltonian; transmittance; Electron mobility; Frequency; Gallium arsenide; Heterojunctions; Physics; Schottky diodes; Semiconductor diodes; Silicon; Steady-state; Tunneling;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
Conference_Location :
Vienna
Print_ISBN :
0-7803-7049-X
DOI :
10.1109/EDMO.2001.974284
