High-frequency properties of an abrupt heterojunction diode

Author

Horák, M.

Author_Institution

Dept. of Microelectron., Brno Univ. of Technol., Czech Republic

fYear

2001

fDate

2001

Firstpage

61

Lastpage

66

Abstract

Steady state and high frequency transmittance of the potential barrier at the abrupt np⁺-heterojunction is investigated. A general method of simulation based on the one-electron tunnelling and the time-dependent Hamiltonian is presented. Numerical results are obtained for a model structure of the n-AlGaAs/p⁺-GaAs diode within the approximation of one and two energy quanta emission or absorption

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; millimetre wave diodes; p-n heterojunctions; semiconductor device models; tunnelling; AlGaAs-GaAs; abrupt heterojunction diode; energy quanta absorption; energy quanta emission; high-frequency properties; mm-wave diodes; model structure; n-AlGaAs/p⁺-GaAs diode; np⁺-heterojunction; one-electron tunnelling; potential barrier; time-dependent Hamiltonian; transmittance; Electron mobility; Frequency; Gallium arsenide; Heterojunctions; Physics; Schottky diodes; Semiconductor diodes; Silicon; Steady-state; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on

Conference_Location

Vienna

Print_ISBN

0-7803-7049-X

Type

conf

DOI

10.1109/EDMO.2001.974284

Filename

974284