Optoelectronic active element based on PbS/ZnSe heterostructure

Author

Khlyap, G.

Author_Institution

State Pedagogical Univ., Drogobych, Ukraine

fYear

2001

fDate

2001

Firstpage

67

Lastpage

69

Abstract

Photoelectric characteristics of isotype n-n-heterostructure PbS/ZnSe grown by low-temperature (T_s=540 K) MBE technique of lead sulfide thin films on monocrystalline ZnSe wafers are studied. Detailed examination of observed photoresponse and photoluminescence in wavelength range 0.4-4.8 μm under temperatures 77-300 K has demonstrated that the space charge region localized at the interface plays the main part in the photo-properties of the structure

Keywords

II-VI semiconductors; lead compounds; molecular beam epitaxial growth; photoelectricity; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; zinc compounds; 0.4 to 4.8 micron; 540 K; 77 to 300 K; II VI semiconductors; PbS-ZnSe; PbS/ZnSe; isotype n-n-heterostructure; low temperature MBE technique; optoelectronic active element; photoelectric characteristics; photoluminescence; photoresponse; space charge region; Capacitance-voltage characteristics; Charge measurement; Current measurement; Electrons; Lead; Molecular beam epitaxial growth; Photoluminescence; Space charge; Temperature distribution; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on

Conference_Location

Vienna

Print_ISBN

0-7803-7049-X

Type

conf

DOI

10.1109/EDMO.2001.974285

Filename

974285