The high quality low temperature oxidation technology in a quasi self-aligned SiGe HBT

Author

Lai, Li-Shyue ; Tseng, Yang-Tai ; Lee, Lurng-Sheng ; Jean, Yuh-Sheng ; Hsu, Yu-Min ; Hang-Ping Hwang ; Lu, Sh-Chii ; Tsai, Ming-Jinn

Author_Institution

Div. of Semicond. Device Technol., ERSO/ITRI, Taiwan

fYear

2001

fDate

2001

Firstpage

77

Lastpage

82

Abstract

A high quality low temperature oxide technology (LTO) was introduced as the emitter/base junction isolation layer of a Silicon-Germanium. (SiGe) HBT. Due to its lower Ge strain relaxation and boron out-diffusion effect, we showed that devices were obtained with a significant improvement in reliability, DC and RF performance in comparison with those fabricated using conventional LTO or thermal oxidation methods

Keywords

Ge-Si alloys; heterojunction bipolar transistors; isolation technology; microwave bipolar transistors; semiconductor device reliability; semiconductor materials; 12.3 V; 26.3 GHz; 41.8 GHz; B out-diffusion effect; DC performance; Ge strain relaxation; RF performance; SiGe; SiGe HBT; emitter/base junction isolation layer; high base-open breakdown voltage; high quality low temperature oxide technology; life testing; quasi self-aligned HBT; reliability; Capacitive sensors; Germanium silicon alloys; Heterojunction bipolar transistors; Interface states; Isolation technology; MOS capacitors; Oxidation; Radio frequency; Silicon germanium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on

Conference_Location

Vienna

Print_ISBN

0-7803-7049-X

Type

conf

DOI

10.1109/EDMO.2001.974287

Filename

974287