Title :
Characteristics of a millimeter wave drain mixer
Author :
Angelov, I. ; Zirath, H. ; Rorsman, N. ; Kollberg, E.
Author_Institution :
Applied Electron Physics, Chalmers University of Technology, Göteborg, Sweden
Abstract :
Different drain mixer configurations, based on Heterostructure Field Effect Transistors (HFET), working at millimeter waves were studied. The mixer has a conversion gain of 6-7 dB at 40 GHz with 5 GHz RF-bandwidth. This is the highest reported gain for an HFET-mixer working in this frequency band.
Keywords :
Frequency; Gain; HEMTs; MESFETs; MODFETs; Millimeter wave technology; Millimeter wave transistors; Mixers; Noise figure; Oscillators;
Conference_Titel :
Microwave Conference, 1992. 22nd European
Conference_Location :
Helsinki, Finland
DOI :
10.1109/EUMA.1992.335833
