Title :
Self-heating effects of GaN FETs for high power microwave applications
Author :
Tam, C.K. ; Koon, K.L. ; Hu, Z.R. ; Rezazadeh, A.
Author_Institution :
Dept. of Electron. Eng., London Univ., UK
Abstract :
The simulation study of self-heating effects of GaN MESFET device is presented. 2D physical device modeling is used to examine the self-heating effects of the device. Simulation results show that the lattice temperature can be as high as 600 K with heat sink placed at the source, which leads to severe reduction of drain to source current, and hence the device output power
Keywords :
III-V semiconductors; gallium compounds; microwave field effect transistors; microwave power transistors; power MESFET; semiconductor device models; thermal analysis; wide band gap semiconductors; 2D physical device modeling; GaN; GaN MESFET; device output power; drain to source current reduction; high-power microwave applications; lattice temperature; self-heating effects; simulation study; Charge carrier processes; Electromagnetic heating; Electron mobility; Gallium nitride; Heat sinks; Lattices; Microwave FETs; Microwave devices; Poisson equations; Temperature;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
Conference_Location :
Vienna
Print_ISBN :
0-7803-7049-X
DOI :
10.1109/EDMO.2001.974294
