DocumentCode
2068305
Title
Self-heating effects of GaN FETs for high power microwave applications
Author
Tam, C.K. ; Koon, K.L. ; Hu, Z.R. ; Rezazadeh, A.
Author_Institution
Dept. of Electron. Eng., London Univ., UK
fYear
2001
fDate
2001
Firstpage
119
Lastpage
123
Abstract
The simulation study of self-heating effects of GaN MESFET device is presented. 2D physical device modeling is used to examine the self-heating effects of the device. Simulation results show that the lattice temperature can be as high as 600 K with heat sink placed at the source, which leads to severe reduction of drain to source current, and hence the device output power
Keywords
III-V semiconductors; gallium compounds; microwave field effect transistors; microwave power transistors; power MESFET; semiconductor device models; thermal analysis; wide band gap semiconductors; 2D physical device modeling; GaN; GaN MESFET; device output power; drain to source current reduction; high-power microwave applications; lattice temperature; self-heating effects; simulation study; Charge carrier processes; Electromagnetic heating; Electron mobility; Gallium nitride; Heat sinks; Lattices; Microwave FETs; Microwave devices; Poisson equations; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
Conference_Location
Vienna
Print_ISBN
0-7803-7049-X
Type
conf
DOI
10.1109/EDMO.2001.974294
Filename
974294
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