Optimization of high-speed SiGe HBTs

Author

Palankovski, V. ; Röhrer, G. ; Wachmann, E. ; Kraft, J. ; Löffle, B. ; Cervenka, J. ; Quay, R. ; Grasser, T. ; Selberherr, S.

Author_Institution

Inst. for Microelectron., Technische Univ. Wien, Vienna, Austria

fYear

2001

fDate

2001

Firstpage

187

Lastpage

191

Abstract

We present a methodology for characterization and optimization of SiGe HBTs from our 0.8 μm BiCMOS technology. It involves process calibration, device calibration employing two-dimensional device simulation, and automated Technology Computer Aided Design (TCAD) optimization. The simulation results show a very good agreement with experimental data. In particular, we perform an optimization of collector doping for specific requirements (high speed or high breakdown voltage)

Keywords

BiCMOS integrated circuits; Ge-Si alloys; calibration; heterojunction bipolar transistors; optimisation; semiconductor device models; semiconductor materials; semiconductor process modelling; technology CAD (electronics); 0.8 micron; 2D device simulation; BiCMOS technology; SiGe HBTs; automated TCAD optimization; characterization; collector doping; device calibration; high breakdown voltage; high-speed HBTs; process calibration; technology computer aided design; Capacitance; Computational modeling; Doping profiles; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Ion implantation; Silicon carbide; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on

Conference_Location

Vienna

Print_ISBN

0-7803-7049-X

Type

conf

DOI

10.1109/EDMO.2001.974305

Filename

974305