Title :
Impact of alternating current on the switch-on duration of optical switches by thin films with defect layers
Author_Institution :
Sch. of Comput. Sci. & Eng., Univ. of Aizu, Fukushima, Japan
Abstract :
This paper analyze the impact of alternating current on the switch-on duration (SOD) of optical switches by thin films with defect layers. The optical switch is implemented with the structure (AB)5Ck(BA)5, in which the dielectric materials are A=GaAs, B=SiO2, C=KTP. k is the parameter that determines the thickness of defect layer C. SOD is a key feature in the design of optical switching, which measures the time length of the period with the transmission over 0.5 in the switching operation. The relation of SOD to the thickness of defect layer and the peak voltage of the applied alternating current has been obtained for the implemented photonic switch.
Keywords :
dielectric materials; dielectric thin films; gallium arsenide; optical switches; potassium compounds; silicon compounds; (GaAsSiO2)5KTPk(SiO2GaAs)5; alternating current; defect layers; dielectric materials; optical switches; photonic switch; switch-on duration; thin films; Optical refraction; Optical switches; Optical variables control; Photonic crystals; Photonics; Refractive index;
Conference_Titel :
Signal Processing, Communications and Computing (ICSPCC), 2011 IEEE International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4577-0893-0
DOI :
10.1109/ICSPCC.2011.6061749
