Impact of alternating current on the switch-on duration of optical switches by thin films with defect layers

Author

Liu, Yong

Author_Institution

Sch. of Comput. Sci. & Eng., Univ. of Aizu, Fukushima, Japan

fYear

2011

fDate

14-16 Sept. 2011

Firstpage

1

Lastpage

4

Abstract

This paper analyze the impact of alternating current on the switch-on duration (SOD) of optical switches by thin films with defect layers. The optical switch is implemented with the structure (AB)₅C_k(BA)₅, in which the dielectric materials are A=GaAs, B=SiO₂, C=KTP. k is the parameter that determines the thickness of defect layer C. SOD is a key feature in the design of optical switching, which measures the time length of the period with the transmission over 0.5 in the switching operation. The relation of SOD to the thickness of defect layer and the peak voltage of the applied alternating current has been obtained for the implemented photonic switch.

Keywords

dielectric materials; dielectric thin films; gallium arsenide; optical switches; potassium compounds; silicon compounds; (GaAsSiO₂)₅KTP_k(SiO₂GaAs)₅; alternating current; defect layers; dielectric materials; optical switches; photonic switch; switch-on duration; thin films; Optical refraction; Optical switches; Optical variables control; Photonic crystals; Photonics; Refractive index;

fLanguage

English

Publisher

ieee

Conference_Titel

Signal Processing, Communications and Computing (ICSPCC), 2011 IEEE International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4577-0893-0

Type

conf

DOI

10.1109/ICSPCC.2011.6061749

Filename

6061749