DocumentCode :
2068638
Title :
A linearized VBE bandgap voltage reference with wide temperature range
Author :
Chen Xiaofei ; Liu Fanhong ; Zou Xuecheng ; Lin Shuangxi
Author_Institution :
Coll. of Opt. & Electron. Inf., Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear :
2013
fDate :
28-31 Oct. 2013
Firstpage :
1
Lastpage :
4
Abstract :
This paper has presented a structure for bandgap reference with wide operating range of temperature by adopting high precision subtractor to eliminate the non-linearization of the TC (temperature coefficient) of VBE. Firstly with the adoption of the technique of curvature compensation, a current with zero TC is obtained. Upon this with the use of subtractor the linearized VBE is achieved. Furthermore, a mixed topology for the output is adopted to add the linearized VBE to the PTAT (proportional to abstract temperature) voltage so as to obtain an adjustable output voltage. This bandgap based on the process of 0.6μm BiCMOS demonstrates a TC (temperature coefficient) of 4.21ppm/°C within the temperature of -50~140°C with the supply voltage of 3.3V and the output voltage of 1V.
Keywords :
BiCMOS integrated circuits; linearisation techniques; network topology; reference circuits; BiCMOS technology; bandgap voltage reference; curvature compensation; high precision subtractor; size 0.6 mum; temperature -50 degC to 140 degC; temperature coefficient; voltage 1 V; voltage 3.3 V; wide temperature range; Abstracts; BiCMOS integrated circuits; CMOS integrated circuits; Educational institutions; Photonic band gap; Power supplies; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location :
Shenzhen
ISSN :
2162-7541
Print_ISBN :
978-1-4673-6415-7
Type :
conf
DOI :
10.1109/ASICON.2013.6812025
Filename :
6812025
Link To Document :
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