DocumentCode
2068638
Title
A linearized VBE bandgap voltage reference with wide temperature range
Author
Chen Xiaofei ; Liu Fanhong ; Zou Xuecheng ; Lin Shuangxi
Author_Institution
Coll. of Opt. & Electron. Inf., Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear
2013
fDate
28-31 Oct. 2013
Firstpage
1
Lastpage
4
Abstract
This paper has presented a structure for bandgap reference with wide operating range of temperature by adopting high precision subtractor to eliminate the non-linearization of the TC (temperature coefficient) of VBE. Firstly with the adoption of the technique of curvature compensation, a current with zero TC is obtained. Upon this with the use of subtractor the linearized VBE is achieved. Furthermore, a mixed topology for the output is adopted to add the linearized VBE to the PTAT (proportional to abstract temperature) voltage so as to obtain an adjustable output voltage. This bandgap based on the process of 0.6μm BiCMOS demonstrates a TC (temperature coefficient) of 4.21ppm/°C within the temperature of -50~140°C with the supply voltage of 3.3V and the output voltage of 1V.
Keywords
BiCMOS integrated circuits; linearisation techniques; network topology; reference circuits; BiCMOS technology; bandgap voltage reference; curvature compensation; high precision subtractor; size 0.6 mum; temperature -50 degC to 140 degC; temperature coefficient; voltage 1 V; voltage 3.3 V; wide temperature range; Abstracts; BiCMOS integrated circuits; CMOS integrated circuits; Educational institutions; Photonic band gap; Power supplies; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC (ASICON), 2013 IEEE 10th International Conference on
Conference_Location
Shenzhen
ISSN
2162-7541
Print_ISBN
978-1-4673-6415-7
Type
conf
DOI
10.1109/ASICON.2013.6812025
Filename
6812025
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