• DocumentCode
    2068638
  • Title

    A linearized VBE bandgap voltage reference with wide temperature range

  • Author

    Chen Xiaofei ; Liu Fanhong ; Zou Xuecheng ; Lin Shuangxi

  • Author_Institution
    Coll. of Opt. & Electron. Inf., Huazhong Univ. of Sci. & Technol., Wuhan, China
  • fYear
    2013
  • fDate
    28-31 Oct. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper has presented a structure for bandgap reference with wide operating range of temperature by adopting high precision subtractor to eliminate the non-linearization of the TC (temperature coefficient) of VBE. Firstly with the adoption of the technique of curvature compensation, a current with zero TC is obtained. Upon this with the use of subtractor the linearized VBE is achieved. Furthermore, a mixed topology for the output is adopted to add the linearized VBE to the PTAT (proportional to abstract temperature) voltage so as to obtain an adjustable output voltage. This bandgap based on the process of 0.6μm BiCMOS demonstrates a TC (temperature coefficient) of 4.21ppm/°C within the temperature of -50~140°C with the supply voltage of 3.3V and the output voltage of 1V.
  • Keywords
    BiCMOS integrated circuits; linearisation techniques; network topology; reference circuits; BiCMOS technology; bandgap voltage reference; curvature compensation; high precision subtractor; size 0.6 mum; temperature -50 degC to 140 degC; temperature coefficient; voltage 1 V; voltage 3.3 V; wide temperature range; Abstracts; BiCMOS integrated circuits; CMOS integrated circuits; Educational institutions; Photonic band gap; Power supplies; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2013 IEEE 10th International Conference on
  • Conference_Location
    Shenzhen
  • ISSN
    2162-7541
  • Print_ISBN
    978-1-4673-6415-7
  • Type

    conf

  • DOI
    10.1109/ASICON.2013.6812025
  • Filename
    6812025