DocumentCode :
2068681
Title :
Efficient construction of a large-signal behavioural HEMT model from automated vectorial large-signal measurements
Author :
Schreurs, D. ; Vandenberghe, S. ; Vandersmissen, R.
Author_Institution :
Div. ESAT-TELEMIC, Katholieke Univ., Leuven, Belgium
fYear :
2001
fDate :
2001
Firstpage :
217
Lastpage :
221
Abstract :
Large-signal models for microwave devices are classically derived via a small-signal detour using S-parameter measurements. Due to the recent advances in the metrology area of vectorial large-signal measurements, several novel modelling methodologies circumventing this small-signal detour are being developed. An important aspect that these methods have in common is the minimisation of the number of required measurements. As in the case of S-parameter measurements, the goal of the large-signal measurements is to adequately cover the predefined operating region of the device-under-test. In this work, we present a method that enables us to automatically calculate the excitation signals to be applied in order to efficiently cover the (V1, V2 ) voltage plane of two-port microwave devices. We illustrate this method on a HEMT, where we obtained a significant (>90%) reduction in measurements. Finally, we show that this limited set of vectorial large-signal measurements is sufficient to construct an accurate time-domain behavioural model
Keywords :
high electron mobility transistors; microwave field effect transistors; minimisation; semiconductor device measurement; semiconductor device models; HEMT; S-parameter measurements; automated vectorial large-signal measurements; device-under-test; excitation signals; large-signal behavioural HEMT model; large-signal measurements; large-signal models; measurement minimisation; metrology; microwave devices; modelling methodologies; predefined operating region; small-signal detour; time-domain behavioural model; two-port microwave devices; vectorial large-signal measurements; voltage plane; Area measurement; HEMTs; Metrology; Microwave devices; Microwave measurements; Microwave theory and techniques; Minimization methods; Scattering parameters; Time domain analysis; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
Conference_Location :
Vienna
Print_ISBN :
0-7803-7049-X
Type :
conf
DOI :
10.1109/EDMO.2001.974310
Filename :
974310
Link To Document :
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