DocumentCode
2068800
Title
SMAFTI package with planarized multilayer interconnects
Author
Motohashi, N. ; Kurita, Y. ; Soejima, K. ; Tsuchiya, Y. ; Kawano, M.
Author_Institution
NEC Electron. Corp., Sagamihara
fYear
2009
fDate
26-29 May 2009
Firstpage
599
Lastpage
606
Abstract
A hybrid multilayer interconnect process and high-throughput die-to-wafer bonding technology were developed and introduced into the SMAFTI (SMArt chip connection with FeedThrough Interposer) package. The fine circuit layer FeedThrough Interposer (FTI) was fabricated between memory and logic dice and offers superior power/signal integrity, allowing over a thousand 3-D inter-chip connections through ultra-fine-pitch feedthrough vias. The unique fabrication processes of the multilayer FTI include a multilayer buildup process on a silicon wafer, filling in vias on the photosensitive polyimide layer, and planarization by chemical mechanical polishing (CMP), resulting in low production costs and an extremely flat surface that ensures void-free die bonding. A simultaneous metal/adhesive bonding process was also evaluated for high-throughput die-to-wafer bonding. Furthermore, the fine interconnect structure was verified to be fundamentally reliable.
Keywords
adhesive bonding; chemical mechanical polishing; integrated circuit interconnections; integrated circuit packaging; microassembling; multilayers; polymer films; silicon; wafer bonding; 3D inter-chip connections; CMP; SMAFTI package; chemical mechanical polishing; fine circuit layer feedthrough interposer; high-throughput die-to-wafer bonding technology; hybrid multilayer interconnect process; metal-adhesive bonding; photosensitive polyimide layer; planarized multilayer interconnects; silicon wafer; ultra-fine-pitch feedthrough vias; void-free die bonding; Bonding; Fabrication; Filling; Integrated circuit interconnections; Logic circuits; Nonhomogeneous media; Packaging; Planarization; Polyimides; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 2009. ECTC 2009. 59th
Conference_Location
San Diego, CA
ISSN
0569-5503
Print_ISBN
978-1-4244-4475-5
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2009.5074074
Filename
5074074
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